Silicone breast implant rupture: Comparison between three-point Dixon and fast spin-echo MR imaging

D. P. Gorczyca, E. Schneider, N. D. DeBruhl, T. K F Foo, C. Y. Ahn, J. W. Sayre, W. W. Shaw, L. W. Bassett

Research output: Contribution to journalArticlepeer-review

49 Scopus citations


OBJECTIVE. This study was designed to compare the three-point Dixon technique with our present MR protocol incorporating T2-weighted fast spin echo and fast spin echo with water suppression to detect ruptured silicone breast implants. SUBJECTS AND METHODS. Eighty-two symptomatic women with silicone breast implants were examined with both the three-point Dixon technique and fast spin-echo MR sequences. Of these patients, 41 had surgery to remove their implants. Four radiologists reviewed the images from only those patients who had surgery and graded each for rupture by using a scale of 1-5. Receiver-operating-characteristic analysis was performed. RESULTS. Of 81 implants removed, 18 were ruptured. Silicone implant ruptures were identified more frequently on the fast spin-echo sequence than on the three- point Dixon sequence, with areas under the ROC curves of .95 and .84, respectively. Although the difference was not statistically significant, the sensitivity for detecting silicone implant rupture was 89% for the fast spin- echo sequence and 61% for the three-point Dixon sequence. The specificity was 97% for both sequences. CONCLUSION. Silicone implant ruptures were detected more frequently with fast spin-echo MR sequences than with the three-point Dixon technique, although the difference was not significant. The greater spatial resolution used for the fast spin-echo sequence partially accounts for the difference in detection of implant ruptures in this study.

Original languageEnglish (US)
Pages (from-to)305-310
Number of pages6
JournalAmerican Journal of Roentgenology
Issue number2
StatePublished - 1994
Externally publishedYes

ASJC Scopus subject areas

  • Radiology Nuclear Medicine and imaging
  • Radiological and Ultrasound Technology


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