Polysilicon diodes as temperature sensors for chemical microreaction systems

S. V. Karnik; H. X. Vo; M. K. Hatalis; M. V. Kothare

doi:10.1109/ISDRS.2001.984468

Polysilicon diodes as temperature sensors for chemical microreaction systems

S. V. Karnik, H. X. Vo, M. K. Hatalis, M. V. Kothare

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Lateral polysilicon P⁺-N-N⁺ and P⁺-P-N⁺ diodes were fabricated and their electrical properties such as ON current, reverse current and series resistance were studied at various temperatures in the range of 50°C to 150°C. It was found that both reverse and forward currents of the diodes increased with the temperature. Using these electrical properties as parameters, the lateral polysilicon diodes can be used as temperature sensors in microreaction systems.

Original language	English (US)
Title of host publication	2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	174-177
Number of pages	4
ISBN (Electronic)	0780374320, 9780780374324
DOIs	https://doi.org/10.1109/ISDRS.2001.984468
State	Published - 2001
Externally published	Yes
Event	International Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States Duration: Dec 5 2001 → Dec 7 2001

Other

Other	International Semiconductor Device Research Symposium, ISDRS 2001
Country/Territory	United States
City	Washington
Period	12/5/01 → 12/7/01

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2001.984468

Cite this

Polysilicon diodes as temperature sensors for chemical microreaction systems. / Karnik, S. V.; Vo, H. X.; Hatalis, M. K. et al.
2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2001. p. 174-177 984468.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Karnik, SV, Vo, HX, Hatalis, MK & Kothare, MV 2001, Polysilicon diodes as temperature sensors for chemical microreaction systems. in 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings., 984468, Institute of Electrical and Electronics Engineers Inc., pp. 174-177, International Semiconductor Device Research Symposium, ISDRS 2001, Washington, United States, 12/5/01. https://doi.org/10.1109/ISDRS.2001.984468

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abstract = "Lateral polysilicon P+-N-N+ and P+-P-N+ diodes were fabricated and their electrical properties such as ON current, reverse current and series resistance were studied at various temperatures in the range of 50°C to 150°C. It was found that both reverse and forward currents of the diodes increased with the temperature. Using these electrical properties as parameters, the lateral polysilicon diodes can be used as temperature sensors in microreaction systems.",

author = "Karnik, {S. V.} and Vo, {H. X.} and Hatalis, {M. K.} and Kothare, {M. V.}",

year = "2001",

doi = "10.1109/ISDRS.2001.984468",

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booktitle = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",

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AU - Vo, H. X.

AU - Hatalis, M. K.

AU - Kothare, M. V.

PY - 2001

Y1 - 2001

N2 - Lateral polysilicon P+-N-N+ and P+-P-N+ diodes were fabricated and their electrical properties such as ON current, reverse current and series resistance were studied at various temperatures in the range of 50°C to 150°C. It was found that both reverse and forward currents of the diodes increased with the temperature. Using these electrical properties as parameters, the lateral polysilicon diodes can be used as temperature sensors in microreaction systems.

AB - Lateral polysilicon P+-N-N+ and P+-P-N+ diodes were fabricated and their electrical properties such as ON current, reverse current and series resistance were studied at various temperatures in the range of 50°C to 150°C. It was found that both reverse and forward currents of the diodes increased with the temperature. Using these electrical properties as parameters, the lateral polysilicon diodes can be used as temperature sensors in microreaction systems.

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BT - 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Semiconductor Device Research Symposium, ISDRS 2001

Y2 - 5 December 2001 through 7 December 2001

ER -

Polysilicon diodes as temperature sensors for chemical microreaction systems

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