Photoluminescence of Er in SiOx

Jun Wan; Chi Sheng; Fang Lu; Da Wei Gong; Yong Liang Fan; Feng Lin; Xun Wang

Photoluminescence of Er in SiO_x

Jun Wan, Chi Sheng, Fang Lu, Da Wei Gong, Yong Liang Fan, Feng Lin, Xun Wang

School of Medicine

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Erbium-doped SiO_x is prepared by molecular beam epitaxy. The influence of Er on the incorporation of O is studied by using Auger specstrocopy. Photoluminescence(PL) peaks around the wavelength of 1.53μm have been observed within the temperature range of 18 to 300 K after annealing. The relationship between PL intensity and annealing temperature is discussed. The temperature dependence of the PL intensity shows an exponential decay with an activation energy of 12 meV at low temperatures (<100 K) and 150 meV at high temperatures (>100K).

Original language	English (US)
Number of pages	1
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	47
Issue number	10
State	Published - Oct 1 1998

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

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title = "Photoluminescence of Er in SiOx",

abstract = "Erbium-doped SiOx is prepared by molecular beam epitaxy. The influence of Er on the incorporation of O is studied by using Auger specstrocopy. Photoluminescence(PL) peaks around the wavelength of 1.53μm have been observed within the temperature range of 18 to 300 K after annealing. The relationship between PL intensity and annealing temperature is discussed. The temperature dependence of the PL intensity shows an exponential decay with an activation energy of 12 meV at low temperatures (<100 K) and 150 meV at high temperatures (>100K).",

author = "Jun Wan and Chi Sheng and Fang Lu and Gong, {Da Wei} and Fan, {Yong Liang} and Feng Lin and Xun Wang",

year = "1998",

month = oct,

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language = "English (US)",

volume = "47",

journal = "Wuli Xuebao/Acta Physica Sinica",

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T1 - Photoluminescence of Er in SiOx

AU - Wan, Jun

AU - Sheng, Chi

AU - Lu, Fang

AU - Gong, Da Wei

AU - Fan, Yong Liang

AU - Lin, Feng

AU - Wang, Xun

PY - 1998/10/1

Y1 - 1998/10/1

N2 - Erbium-doped SiOx is prepared by molecular beam epitaxy. The influence of Er on the incorporation of O is studied by using Auger specstrocopy. Photoluminescence(PL) peaks around the wavelength of 1.53μm have been observed within the temperature range of 18 to 300 K after annealing. The relationship between PL intensity and annealing temperature is discussed. The temperature dependence of the PL intensity shows an exponential decay with an activation energy of 12 meV at low temperatures (<100 K) and 150 meV at high temperatures (>100K).

AB - Erbium-doped SiOx is prepared by molecular beam epitaxy. The influence of Er on the incorporation of O is studied by using Auger specstrocopy. Photoluminescence(PL) peaks around the wavelength of 1.53μm have been observed within the temperature range of 18 to 300 K after annealing. The relationship between PL intensity and annealing temperature is discussed. The temperature dependence of the PL intensity shows an exponential decay with an activation energy of 12 meV at low temperatures (<100 K) and 150 meV at high temperatures (>100K).

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M3 - Article

AN - SCOPUS:0346246790

SN - 1000-3290

VL - 47

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 10

ER -

Photoluminescence of Er in SiO_x

Abstract

ASJC Scopus subject areas

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