Octadecanethiol SAMs as molecular resists for electrodeposition of cobalt

Patterned self-assembled monolayers can be used to direct surface processes to occur at specific locations on a surface. Recently, patterned SAMs have been shown to function as molecular resists in directing electrodeposition. In this paper, we explore the limits of ODT SAMs as molecular resists for the electrodeposition of cobalt as a function of deposition potential, time, and Co(II) concentration. We show that patterned ODT SAMs can serve as effective resists for eletrodeposition of high fidelity features with no breakdown of the ODT-modified regions. Breakdown results in formation of Co islands in the ODT-modified regions and is dependent on deposition potential, time, and Co(II) concentration.