TY - JOUR
T1 - Nucleation and growth during the chemical vapor deposition of diamond on SiO2 substrates
AU - Rankin, Janet
AU - Jacobson, Matthew W.
AU - Boekenhauei, Rachel E.
AU - Csencsits, Roseann
AU - Shisesato, Yuzo
AU - Sheldon, Brian W.
N1 - Funding Information:
This research was supported by the Air Force Office of Scientific Research, under Grant AFOSR-91-0357 to Brown University. Janet Rankin was supported as a Bunting Fellow by the Office of Naval Research. We also wish to thank T-Y. Kim for preparing the oxidized Si substrates.
PY - 1994/8
Y1 - 1994/8
N2 - The early stages of microwave-plasma assisted CVD of diamond on fused silica and silicon substrates were investigated. Nucleation densities on fused silica were somewhat lower than on silicon; however, the diamond growth rates on fused silica were faster. These results suggest that the substrate alters the plasma chemistry near the substrate. Transmission electron microscopy showed a relatively smooth interface between the diamond grains and the Si02 surface. At low nucleation densities, the growth kinetics on both substrates were linear (i.e., the average feature size was proportional to the deposition time), which indicates that the growth kinetics were initially controlled by reaction(s) at the growing diamond surfaces. The transition to nonlinear growth kinetics observed at higher nucleation densities was probably caused by mass-transport limits.
AB - The early stages of microwave-plasma assisted CVD of diamond on fused silica and silicon substrates were investigated. Nucleation densities on fused silica were somewhat lower than on silicon; however, the diamond growth rates on fused silica were faster. These results suggest that the substrate alters the plasma chemistry near the substrate. Transmission electron microscopy showed a relatively smooth interface between the diamond grains and the Si02 surface. At low nucleation densities, the growth kinetics on both substrates were linear (i.e., the average feature size was proportional to the deposition time), which indicates that the growth kinetics were initially controlled by reaction(s) at the growing diamond surfaces. The transition to nonlinear growth kinetics observed at higher nucleation densities was probably caused by mass-transport limits.
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U2 - 10.1557/JMR.1994.2164
DO - 10.1557/JMR.1994.2164
M3 - Article
AN - SCOPUS:0028481232
SN - 0884-2914
VL - 9
SP - 2164
EP - 2173
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 8
ER -