Abstract
Semiconductors below the half band gap exhibit higher bound-electronic, off-resonant nonlinearities compare to Silica fibers. They also exhibit low scattering losses, negligible two-photon absorption, and no linear absorption. Furthermore, due to the mature fabrication technology many complicated device designs can be easily fabricated. Thus, this material system offers unique opportunity to observe and test novel nonlinear phenomena and devices. In this paper, we will review the nonlinear optical properties of AlGaAs waveguides near the half band gap.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 53-64 |
| Number of pages | 12 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3940 |
| State | Published - 2000 |
| Event | Ultrafast Phenomena in Semiconductors IV - San Jose, CA, USA Duration: Jan 27 2000 → Jan 28 2000 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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