Abstract
Progress made towards realizing all-optical multiplexing and demultiplexing elements, formed in half band gap semiconductors, are reviewed. A range of multiplexing and demultiplexing configurations based on nonlinear directional couplers in AlGaAs is demonstrated. The use of an integrated format results in a compact device which leads to reduced delay times and insensitivity to environmental parameters such as temperature gradients.
Original language | English (US) |
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Pages (from-to) | 7/1-7/6 |
Journal | IEE Colloquium (Digest) |
Issue number | 110 |
State | Published - 1995 |
Externally published | Yes |
Event | IEE Electronics Division Colloquium on Towards Terabit Transmission - London, UK Duration: May 19 1995 → May 19 1995 |
ASJC Scopus subject areas
- General Engineering
- Electrical and Electronic Engineering