J. F. Dicello, M. E. Schillaci, C. W. McCabe, J. D. Doss, M. Paciotti, P. Berardo, J. F. Dicello

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


The rate of error induction in 4K static RAMs from high-energy pion and muon beams has been measured at three energies and as a function of depth in plastic. Preliminary data for 16K NMOS and 64K CMOS static RAMs were also obtained. Only two errors were observed from muon beams incident upon 4K chips for 1. 4 multiplied by 10**1**0 particles/cm**2 . In contrast, energetic pion beams produced errors in the same chips at the rate of typically 5 multiplied by 10-**8 errors per incident particle per cm**2 . In the pion beams the rate decreased slowly with decreasing energy until the particles approached the end of their range. In the stopping region, the error rate continued to decrease for positively charged pions but increased about a factor of seven for negatively charged pions. Monte Carlo programs have been run both to simulate the production of pions in the atmosphere as a function of elevation and to simulate the interactions of pions in the 4K chip.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 1 1985
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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