Abstract
We report measurements of the spectral dispersion and the magnitude of three-photon absorption in Al0.18Ga0.82As for photon energies between one half and one third the band gap and show that a two-parabolic-band model is valid in this material. These results indicate that there is a limited spectral range below half the band gap in AlGaAs (and presumably all semiconductors) in which the bound electronic optical nonlinearity can be used without significant multiphoton absorption.
Original language | English (US) |
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Pages (from-to) | 147-149 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 2 |
DOIs | |
State | Published - 1994 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)