Fabrication of Bi1-xSbx thermoelectric semiconductor films by electrodeposition

Lan Hong, Shan Ren, P. M. Vereecken, L. Sun, P. C. Searson

Research output: Contribution to journalArticlepeer-review


Bi1-xSbx semiconductor alloy are important thermoelectric and magnetoelectronic materials, exhibiting unusual electronic properties, and are of interest for electric-cooling, thermal energy conversion, and magnetoelectronic devices. Electrochemical deposition is of simple and low cost method, displaying a potential application in the deposition of semiconductor films. The electrodeposition of Bi1-xSbx thermoelectric film from Bi and Sb chloride electrolyte with high concentration of chloride acid was investigated systematically. The concentration of Bi1-xSbx in solution was gradually changed from pure Bi to pure Sb. The structures of deposited films were investigated with electron microscopy (SEM, TEM), electron probe (WBS), and X ray diffraction method (XRD). The results shown that the high concentration of chloride acid of electrolyte was effective to avoid the tendency of formation of antimony oxide in the electrolyte, and high quality Bi1-xSbx films were electrodeposited across the entire composition range from pure Bi to pure Sb. The films present a textured crystal structure, with (012) preferred orientation, and the grain size also changed for different solution composition. The electrodeposition process is controlled by the solution diffusion. The potential gap between the deposition and the strip of the films varied with the change of solution composition, and process of deposition to stripping for antimony film is more unreversible than that for bismuth film.

Original languageEnglish (US)
Pages (from-to)37-41
Number of pages5
JournalZhongshan Daxue Xuebao/Acta Scientiarum Natralium Universitatis Sunyatseni
Issue number1
StatePublished - Jan 2006


  • Bi-Sb alloy
  • Current-potential curve
  • Electrodeposition
  • Semiconductor
  • Thermoelectric films

ASJC Scopus subject areas

  • General


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