Electrochemical nucleation and growth of gold on silicon

Gerko Oskam, Peter C. Searson

Research output: Contribution to journalArticlepeer-review


In this paper we report on the nucleation and growth of gold on n-type silicon from solution by electrochemical deposition. We show that deposition occurs by progressive nucleation and diffusion limited growth of 3D hemispherical islands. Gold films were prepared by nucleation at a potential where the maximum nucleus density is obtained, followed by growth under kinetic control. Transmission electron microscopy confirmed that the films were continuous and polycrystalline with a 〈111〉 texture. The electrical properties of the Si/Au junctions were comparable to junctions prepared by evaporation or sputtering.

Original languageEnglish (US)
Pages (from-to)103-111
Number of pages9
JournalSurface Science
Issue number1-2
StatePublished - Feb 1 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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