Dependence of carrier lifetime and resistivity on annealing in InP grown by He-plasma-assisted molecular beam epitaxy

Jin U. Kang; Michael Y. Frankel; Ronald D. Esman; D. A. Thompson; B. J. Robinson

doi:10.1063/1.367110

Dependence of carrier lifetime and resistivity on annealing in InP grown by He-plasma-assisted molecular beam epitaxy

Jin U. Kang, Michael Y. Frankel, Ronald D. Esman, D. A. Thompson, B. J. Robinson

Research output: Contribution to journal › Article › peer-review

Abstract

We have experimentally investigated the carrier lifetime and resistivity versus anneal temperature in InP films grown by He-plasma-assisted molecular beam epitaxy. This material is shown to exhibit picosecond carrier lifetime with high resistivity even after anneal at temperatures up to 700°C.

Original language	English (US)
Pages (from-to)	3423-3425
Number of pages	3
Journal	Journal of Applied Physics
Volume	83
Issue number	6
DOIs	https://doi.org/10.1063/1.367110
State	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.367110

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@article{c5b8708330e04433add7e5f3468e6085,

title = "Dependence of carrier lifetime and resistivity on annealing in InP grown by He-plasma-assisted molecular beam epitaxy",

abstract = "We have experimentally investigated the carrier lifetime and resistivity versus anneal temperature in InP films grown by He-plasma-assisted molecular beam epitaxy. This material is shown to exhibit picosecond carrier lifetime with high resistivity even after anneal at temperatures up to 700°C.",

author = "Kang, {Jin U.} and Frankel, {Michael Y.} and Esman, {Ronald D.} and Thompson, {D. A.} and Robinson, {B. J.}",

year = "1998",

doi = "10.1063/1.367110",

language = "English (US)",

volume = "83",

pages = "3423--3425",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

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T1 - Dependence of carrier lifetime and resistivity on annealing in InP grown by He-plasma-assisted molecular beam epitaxy

AU - Kang, Jin U.

AU - Frankel, Michael Y.

AU - Esman, Ronald D.

AU - Thompson, D. A.

AU - Robinson, B. J.

PY - 1998

Y1 - 1998

N2 - We have experimentally investigated the carrier lifetime and resistivity versus anneal temperature in InP films grown by He-plasma-assisted molecular beam epitaxy. This material is shown to exhibit picosecond carrier lifetime with high resistivity even after anneal at temperatures up to 700°C.

AB - We have experimentally investigated the carrier lifetime and resistivity versus anneal temperature in InP films grown by He-plasma-assisted molecular beam epitaxy. This material is shown to exhibit picosecond carrier lifetime with high resistivity even after anneal at temperatures up to 700°C.

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U2 - 10.1063/1.367110

DO - 10.1063/1.367110

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AN - SCOPUS:0038256882

SN - 0021-8979

VL - 83

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

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Dependence of carrier lifetime and resistivity on annealing in InP grown by He-plasma-assisted molecular beam epitaxy

Abstract

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